SEMICONDUCTOR DEVICE 5960-00-552-8298 Diodes Microsemi JAN1N430B

( Brand: Semiconductor Device ), ( Model: 1N430 ), ( Country/region Of Manufacture: United States )

Review SEMICONDUCTOR DEVICE Diodes Microsemi

The 5960-00-552-8298 is a 15-piece pack of Janis Jansen Series JAN1N430B semiconductor diodes manufactured by Microsemi. This diode is a high-speed, high-voltage, and high-power silicon diode, specifically designed for use in various applications requiring high performance and reliability.

The JAN1N430B diode has a maximum reversed voltage rating of 1000V, making it suitable for use in high-voltage circuits. It also offers a low forward voltage drop of around 1.2V at a current of 1A, which results in efficient power conversion and reduces power dissipation. The diode's high surge current capability of 16.7A ensures reliable operation even during transient conditions.

The JAN1N430B diode is known for its fast switching speed, with a typical forward recovery time of 10ns. This makes it an ideal choice for applications requiring fast switching, such as high-frequency power supplies, rectifiers, and voltage regulators. The diode also exhibits low reverse recovery charge, which minimizes voltage spikes during recovery, resulting in reduced EMI and improved circuit efficiency.

Microsemi's JAN1N430B diode is designed to operate over a wide temperature range, from -65 C to 150 C, making it suitable for use in a variety of environmental conditions. It is packaged in a hermetic TO-220 package, which provides excellent thermal dissipation and mechanical robustness.

In summary, the 5960-00-552-8298 pack of JAN1N430B diodes from Microsemi is a high-performance, high-reliability diode ideal for use in high-voltage, high-power, and high-speed applications. Its fast switching speed, low forward voltage drop, high surge current capability, and wide temperature range make it a versatile component for various electronic circuits.

1. High reliability: The 1N430 diodes are known for their high reliability, making them ideal for applications that require long-term performance.

2. Wide operating voltage range: These diodes can operate over a wide voltage range, making them versatile for use in various applications.

3. Low forward voltage drop: The 1N430 diodes have a low forward voltage drop, which helps to reduce power loss and increase efficiency in circuits.

4. High reverse breakdown voltage: These diodes have a high reverse breakdown voltage, making them suitable for use in high-power applications.

1. Limited availability: Due to their specialized nature, these diodes may not be readily available in all electronic component distributors, which could lead to longer lead times or higher prices.

2. High cost: Compared to standard diodes, the 1N430 diodes can be more expensive due to their specialized features and high-quality materials.

3. Limited current handling capacity: While these diodes have a high reverse breakdown voltage, their current handling capacity may be limited in comparison to other types of diodes, which could be a disadvantage in high-current applications.

In conclusion, the 5960-00-552-8298 15 semiconductor device diodes Jan1N430B (Microsemi 1N430) offer several advantages, such as high reliability, wide operating voltage range, low forward voltage drop, and high reverse breakdown voltage. However, their limited availability, high cost, and limited current handling capacity should be considered before making a purchase decision. If the specific features of these diodes are necessary for your application, the higher cost and potential availability issues may be worth it for the improved performance and reliability. However, if standard diodes will meet your needs, it may be more cost-effective to choose a different option.

Details:

769 inches maximum overall diameter 0.

780 inches maximum nominal thread size Semiconductor material silicon voltage rating in volts per characteristic ea 2015 alt NS: microsemi, solid state Devices, inc. Millimetres repetitive peak forward current minimum power rating per characteristic Millie watts small-signal input power, common-collector preset maximum operating temp measurement point Semiconductor Device diodes model 1N430, jan1n430 army P/N Nan 0376 nos condition.

part #: 1n430 prices

• $26.99-$110.00

specifications vintaelec:

• brand: Semiconductor Device
• model: 1n430
• country/region of manufacture: United States

Ratings:

1. Fast Shipping, might want to work on packaging. 11-08-17
2. Extremely easy person to deal with, would buy from again and recommend to all 09-25-17
3. It was exactly what I needed! 11-04-17
4. Fast shipping, A seller. Thanks! 11-12-17
5. A Thank you 11-03-17

Payments vintaelec:

• PayPal

General vintaelec:

• vintage electronics > equipment
• in stock: Yes

Returns vintaelec:

• policy: returns accepted
• time: 14 Days
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• type: Money Back

Offer vintaelec:

• quantity: 1
• bids: 0
• best offer: false
• Started: November 20, 2017, 4:55 pm
• Sold: 0

Seller vintaelec:

• zipcode: 11717
• city: Brentwood, New York

Shipping vintaelec:

• type: Flat
• cost: $9.75
• handling: days

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